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- Keywords Czochralski silicon;grow-in oxygen precipitation;DZ;RTP; 直拉硅;原生氧沉淀;洁净区;快速热处理;
- Keywords Czochralski silicon crystal;turbulence model;crystal rotation;crucible rotation; 直拉单晶硅;紊流模型;晶体旋转;坩埚旋转;
- Keywords Czochralski silicon,high pressure,oxygen precipitation,thermal donor,nitrogen doping,RTA; 关键词直拉硅;高压;氧沉淀;热施主;氮掺杂;快速热处理;重掺硼;
- Keywords Czochralski silicon;Oxygen precipitation;Internal gettering;Rapid thermal processing;Neutron-irradiation; 直拉硅;氧沉淀;内吸杂;快速热处理;中子辐照;
- We made the Czochralski silicon single crystal with a diameter of 12 inches. 直径12英寸直拉单晶硅研制成功。
- The effects of the transition metals copper and nickel on oxygen precipitation in Czochralski silicon under a rapid thermal process are investigated. 摘要研究了快速热处理工艺下直拉单晶硅中过渡族金属铜、镍对内吸杂工艺中氧沉淀形成规律的影响。
- In recent years, nitrogen-doped czochralski silicon (NCZ)has attracted intensive attention from the industrial circle and academia. 掺氮直拉硅单晶近年来引起了硅材料产业界和学术界的广泛关注。
- The effect of nickel contamination under rapid thermal processing (RTP) on the magic denuded zone (MDZ) in Czochralski silicon is investigated. 摘要研究了过渡族金属镍在快速热处理作用下对直拉单晶硅中洁净区形成的影响。
- The invention relates to a czochralski silicon single crystal growth device, belonging to field of semi-conductor technology. 本发明涉及一种直拉单晶生长装置，属于半导体生长设备技术领域。
- The dislocation free crystal growth based on heavily B doped seeds without Dash necking was introduced. The mechanical properties, the oxygen and the void defects of heavily B doped Czochralski silicon were also discussed. 主要内容包括重掺B硅单晶的基本性质 ,利用重掺B籽晶进行无缩颈硅单晶生长技术 ,重掺B硅单晶的机械性能 ,重掺B硅单晶中的氧和氧沉淀 ,以及B的大量掺杂与大直径直拉硅单晶中空洞型 (Void)原生缺陷的控制关系。
- heavily boron-doped Czochralski silicon 重掺硼直拉硅
- Czochralski silicon speed control 提拉速度控制
- 300mm nitrogen-doped Czochralski silicon wafer 300mm掺N直拉Si片
- Keywords Czochralski method;Sapphire crystal;Temperature gradient;Stress; 提拉法;白宝石单晶;温度梯度;应力;
- Oxygen Precipitation and Induced Defects in Heavily Doped Czochralski Silicon 重掺杂直拉硅单晶氧沉淀及其诱生二次缺陷
- Keywords Czochralski technique;ferroelectric-ferroelastic crystal;ferroelectric domain;ferroelastic domain; 提拉法晶体生长;铁电-铁弹晶体;铁电畴;铁弹畴;
- Keywords Czochralski method;auto extending shoulder;top floating steelyard;optiming design;inverted simulate; 提拉法;自动扩肩;上“浮秤”;优化设计;逆向模拟;
- Keywords Czochralski method;numerical simulation;crystal growth;convection;interface shape; 提拉法;数值模拟;晶体生长;对流;界面形状;
- The Czochralski silicon monocrystalline polished wafer with a diameter of eight inches 8英寸直拉硅单晶抛光片
- Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer 直拉单晶硅中氧沉淀的高温消融和再生长
